具有雙膜差動結構之場效型離子感測裝置

Translated title of the contribution: Field-effect type ion detection device with dual-film differential structure

Chia-Ming Yang (Inventor), Chao-Sung Lai (Inventor), CHENGEN LUE (Inventor), QING-MEI WU (Inventor)

Research output: Patent

Abstract

This invention discloses a field-effect type ion detection device with dual-film differential structure, including a semiconductor substrate having an upper surface and a lower surface, an insulation layer formed on the upper surface of the semiconductor substrate, a first film layer formed on the insulation layer, a second film layer formed on part of the surface of the first film layer, and a metal contact layer formed on part of the lower surface of the semiconductor substrate.
Translated title of the contributionField-effect type ion detection device with dual-film differential structure
Original languageChinese (Traditional)
IPCG01N 27/414(2006.01)
StatePublished - 01 06 2011

Bibliographical note

公開公告號: 2.01118374E8
Announcement ID: 2.01118374E8

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