Abstract
This invention discloses a field-effect type ion detection device with dual-film differential structure, including a semiconductor substrate having an upper surface and a lower surface, an insulation layer formed on the upper surface of the semiconductor substrate, a first film layer formed on the insulation layer, a second film layer formed on part of the surface of the first film layer, and a metal contact layer formed on part of the lower surface of the semiconductor substrate.
Translated title of the contribution | Field-effect type ion detection device with dual-film differential structure |
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Original language | Chinese (Traditional) |
IPC | G01N 27/414(2006.01) |
State | Published - 01 06 2011 |
Bibliographical note
公開公告號: 2.01118374E8Announcement ID: 2.01118374E8