Abstract
This invention discloses a field-effect type ion detection device with dual-film differential structure, including a semiconductor substrate having an upper surface and a lower surface, an insulation layer formed on the upper surface of the semiconductor substrate, a first film layer formed on the insulation layer, a second film layer formed on part of the surface of the first film layer, and a metal contact layer formed on part of the lower surface of the semiconductor substrate.
| Translated title of the contribution | Field-effect type ion detection device with dual-film differential structure |
|---|---|
| Original language | Chinese (Traditional) |
| Patent number | I452290 |
| IPC | G01N 27/414(2006.01) |
| State | Published - 11 09 2014 |
Bibliographical note
公開公告號: I452290Announcement ID: I452290