Abstract
A GaN LED having a backside reflector and a heat dissipation layer and a method for manufacturing the same are disclosed. The method includes etching multiple recessed voids at the bottom of the sapphire substrate of a testing sheet. The method further includes evaporating a reflective metal layer on the bottom of the sapphire substrate and the recessed voids. Therefore, light emitted downwardly from a light emitting layer can be reflected upwardly by the reflective metal layer. The emitting efficiency of the GaN LED can be increased. The method further includes electroplating copper at the recessed voids to fill the recessed voids with a copper block to decrease the heat effect generation. The emitting efficiency of the GaN LED can be further increased.
Original language | Chinese (Traditional) |
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Patent number | I443871 |
IPC | H01L 33/46(2010.01) |
State | Published - 01 07 2014 |
Bibliographical note
公開公告號: I443871Announcement ID: I443871