具背面反射鏡與散熱層之氮化鎵發光二極體及其製造方法

Translated title of the contribution: GaN LED having backside reflector and heat dissipation layer and manufacturing method thereof

Chia-Lung Tsai (Inventor), Ray-Ming Lin (Inventor), MENG-QI WU (Inventor), MIN-HONG DONG (Inventor), YI-JUN GUO (Inventor), YI-LUN CHOU (Inventor), JEN-CHIH LI (Inventor)

Research output: Patent

Abstract

A GaN LED having a backside reflector and a heat dissipation layer and a method for manufacturing the same are disclosed. The method includes etching multiple recessed voids at the bottom of the sapphire substrate of a testing sheet. The method further includes evaporating a reflective metal layer on the bottom of the sapphire substrate and the recessed voids. Therefore, light emitted downwardly from a light emitting layer can be reflected upwardly by the reflective metal layer. The emitting efficiency of the GaN LED can be increased. The method further includes electroplating copper at the recessed voids to fill the recessed voids with a copper block to decrease the heat effect generation. The emitting efficiency of the GaN LED can be further increased.
Translated title of the contributionGaN LED having backside reflector and heat dissipation layer and manufacturing method thereof
Original languageChinese (Traditional)
IPCH01L-033/46(2010.01)
StatePublished - 16 12 2011

Bibliographical note

公開公告號: 2.01145594E8
Announcement ID: 2.01145594E8

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