Abstract
本文以濕氧化技術研製具DBR結構之發光二極體(LED)，得到具電流侷限(Current Blocking)分佈之發光二極體。LED元件經適當濕氧化(Wet Oxidation)條件，可以有效地侷限LED電流分佈，並藉由將p型電極設計成環狀，使得LED晶粒的發光強度不會敏電極阻擋。由實驗結果得到，使用濕氧化的技術可以有效提高(AlxGa1-x)0.5In0.5P LED的發光亮度。
The current blocking effect with Distributed Bragg Reflector (DBR) structure of (AlxGa1-x)0.5In0.5P light emitting diodes (LED) was proposed by using wet oxidation technology. By the optimal wet oxidation conditions, it can confine the current distribution through the p-n junction into the LED's periphery contact ring center region effectively and also improved the light emitting diodes brightness.
The current blocking effect with Distributed Bragg Reflector (DBR) structure of (AlxGa1-x)0.5In0.5P light emitting diodes (LED) was proposed by using wet oxidation technology. By the optimal wet oxidation conditions, it can confine the current distribution through the p-n junction into the LED's periphery contact ring center region effectively and also improved the light emitting diodes brightness.
| Original language | Chinese (Traditional) |
|---|---|
| Pages (from-to) | 25-32 |
| Journal | 真空科技 |
| Volume | 16 |
| Issue number | 3 |
| State | Published - 2004 |