Abstract
This invention discloses an optoelectronic semiconductor heat dissipation package structure with electrostatic discharge protection capability, wherein the package substrate structure is a semiconductor substrate/metal layer/reflection layer/insulation layer/circuit layer structure, and part of the package substrate structure can provide an eutectic layer between the reflection layer and the insulation layer, wherein the insulation layer is made by a semiconductor process and is featured by thin and flat. Therefore, the yield of the optoelectronic semiconductor packaging process can be increased. In addition, the thickness of the insulation layer can be effectively controlled to increase the capacitive characteristics of the package substrate to greatly increase the electrostatic resistance. In addition, a low melting point alloy is used for eutectic layer and semiconductor substrate etching to achieve the purpose of LED heat dissipation. Because a reflection layer is disposed between the insulation layer and the circuit layer of the package substrate, the improvement of light emission efficiency of the optoelectronic semiconductor element can be achieved.
| Original language | Chinese (Traditional) |
|---|---|
| IPC | H01L 33/48(2010.01); H01L 33/44(2010.01) |
| State | Published - 16 11 2012 |
Bibliographical note
公開公告號: 2.01246613E8Announcement ID: 2.01246613E8