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分離式石墨烯奈米碟電荷儲存層的製造方法與應用之記憶體元件
Translated title of the contribution
:
A DISCRETE GRAPHENE NANODISK AS THE CHARGE STORAGE LAYER FOR MANUFACTURING METHOD AND MEMORY APPLICATION
Jer-Chyi Wang
(Inventor)
, Chao-Sung Lai (Inventor)
, CHUFA CHAN (Inventor)
, CHIH-TING LIN (Inventor)
Department of Electronic Engineering
Research output
:
Patent
Overview
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Engineering
Oxide Layer
100%
Applications
100%
Charge Storage
100%
Tunneling
60%
Substrates
40%
Nanocrystal
40%
Pharmacology, Toxicology and Pharmaceutical Science
Graphene
100%
Oxide
100%
Nanodisc
100%
Nanocrystal
40%
Material Science
Graphene
100%
Oxide
100%
Film
60%
Nanocrystals
40%
Computer Science
Application Memory
100%
Tunneling
100%