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利用氧化鈀做為閘極材料來提升氮化鎵高速元件特性之研製

Translated title of the contribution: Improved Device Performance of GaN/AlGaN HEMTs with Palladium Oxide Gate Dielectric
  • 陳昱仁

Research output: Types of Thesis › Master's thesis

Translated title of the contributionImproved Device Performance of GaN/AlGaN HEMTs with Palladium Oxide Gate Dielectric
Original languageChinese (Traditional)
Supervisors/Advisors
  • Lin, Ray-Ming, Supervisor
StatePublished - 2013
Externally publishedYes

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