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利用電漿摻雜於閘極氧化層改善背閘極式二硫化鉬電晶體之特性

Translated title of the contribution: Improved Electrical Performance of Bottom-Gate MoS2 Transistor by Plasma Doping on the Gate Oxide
  • 張心怡

Research output: Types of Thesis › Master's thesis

Translated title of the contributionImproved Electrical Performance of Bottom-Gate MoS2 Transistor by Plasma Doping on the Gate Oxide
Original languageChinese (Traditional)
Supervisors/Advisors
  • Lai, Chao-Sung, Supervisor
  • Yang, Chia-Ming, Supervisor
StatePublished - 2019
Externally publishedYes

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