| Translated title of the contribution | Investigation of InAlN/GaN and P-GaN/AlGaN/GaN hetero-structure fields effect transistors |
|---|---|
| Original language | Chinese (Traditional) |
| Supervisors/Advisors |
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| State | Published - 2016 |
| Externally published | Yes |
前瞻性氮化銦鋁/氮化鎵與P型氮化鎵/氮化鋁鎵/氮化鎵異質結構場效電晶體之研究
彭立儀
Research output: Types of Thesis › Master's thesis