化合物半導體元件晶圓製造方法

The invention provides a wafer manufacturing method for compound semiconductor device. The method comprises the steps of growing up crystal rod, grinding diameter of crystal rod, removing corner, grinding, and polishing. Its characteristic is that it makes a polishing step on the edge of crystal rod before cutting into slice step. Further, using a lathe and showers the abrasive thick liquid on the surface of the crystal rod, it rotates the crystal rod. Furthermore, it polishes the edge of the crystal rod by grinding pad to release the stress of the crystal rod. By means of this way, before cutting into slice, it releases the internal stress of the crystal rod. It prevents the wafer cracking at the stress concentration point after cutting the wafer. Moreover, it effectively saves the semiconductor material. Eventually, it achieves better economical benefit.