Abstract
The invention provides a method of fabricating flip chip substrate connecting with multi chips and having anti electrostatic destruction property and the device thereof. The flip chip substrate with conductive layer, insulation layer, and conductive layer capacity (CIC) is patterned by photo mask so that plural light emitting devices can connect with the flip chip substrate with CIC capacitor. The flip chip substrate with CIC capacity is composed of semiconductor layer, insulation layer, and semiconductor substrate. The semiconductor substrate is formed by high heat dissipation material. The insulation layer is formed by material of high dielectric or high break down voltage. Therefore, not only it can protect the plural light emitting devices to avoid the destruction by the electrostatic discharge but also save the cost and reduce the space of assembled plural light emitting devices. The effect of high heat dissipation is achieved by the semiconductor substrate.
Translated title of the contribution | Method of fabricating flip chip substrate connecting with multi chips and having anti electrostatic destruction property and the device thereof |
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Original language | Chinese (Traditional) |
Patent number | I347689 |
IPC | H01L 33/00(2010.01); H01L 23/492(2006.01); H01L 23/64(2006.01) |
State | Published - 21 08 2011 |
Bibliographical note
公開公告號: I347689Announcement ID: I347689