單異質結構砷化鋁鎵/磷化銦鎵二次成長界面處理之研究

　　　　　本文探討以 GaAs 基底，生長單異質結構 AlGaAs/InGaP 光電材料時， 其中會產 生第一磊晶層 InGaP 的殘餘生長液交互污染第二磊晶層 AlGaAs 之現象。 我們提出以二次 成長之方法解決銦殘餘交互污染之問題，並以硫化處理解決二次生長前介面氧化，及二次生 長時高溫造成 InGaP 磊晶層磷之過度揮發而產生磊晶缺陷之困擾。 經實驗比較分析，本論 文所提出的解決分析，對在 GaAs 基底上生長單異質結構 AlGaAs/InGaP 光電材料之品質， 確有顯著之改善效果。
　　　　　The interface contamination problems between the first InGaP and the second AlGaAs epilayes have studied in this paper. We grew single heterostructure AlGaAs/InGaP double layers on GaAs substrates, and solved the interface contamination problem of Indium residues by the regrowth process and the sulfide-passivation method. The proposed regrowth process used in this study can be used to remove the residual Indium melt. The sulfide-passivation treatment can prevent oxidation before the regrowth process and suppress the over volatilizatinof phosphor from the InGaP grown layers. According to the experimental results and comparisons, the proposed method in this paper has improved the quality of the grown AlGaAs/InGaP heterostructures.