垂直式免切割的金屬基板發光二極體之製程

A fabrication process for vertical dicing-free light-emitting diodes with metal substrate is provided, comprising the steps of: A. providing a cleaned GaN-based LED specimen; B. depositing an ohmic contact reflective layer on the specimen; C. using a thick photo-resist, as thick as 50-200 mm, to define a plurality of mutual independent copper electroplating areas on the ohmic contact reflective layer; D. using the electroplating method to electroplate copper substrate to define a few copper electroplating area to form a plurality of mutually independent copper substrates; E. using a laser to dissect the substrate; F. removing the un-doped GaN layer and producing n-GaN electrode in n-type GaN layer. This method can prevent metal sputtering when cutting a copper substrate and prevent warping of the copper substrate after the separation from the substrate.