Abstract
The invention is related about the solar energy photoelectricity transferring apparatus. The structure for the invention will comprise the plate layer, the buffer layer, the first transparent electric conduction layer, the first silicon layer, the second silicon layer, the second transparent electric conduction layer and the protection layer formed. Especially the electric property for the first silicon layer and the second silicon layer are the opposite electrode each other, also, the electric property for the first transparent electric conduction layer and the second transparent electric conduction layer are the opposite electrode each other.
| Translated title of the contribution | SOLAR ENERGY PHOTOELECTRIC CONVERSION APPARATUS |
|---|---|
| Original language | Chinese (Traditional) |
| Patent number | I371112 |
| IPC | H01L 31/042(2014.01) |
| State | Published - 16 04 2009 |
Bibliographical note
公開公告號: I371112Announcement ID: I371112