Abstract
The invention discloses an ESD (Electrostatic discharge) and EMP (Electromagnetic pulse) protection device, which uses the wide-bandgap semiconductor material to make a wide-bandgap semiconductor device, wherein an embodiment of the wide-bandgap semiconductor device is a diode. Therefore, the wide bandgap diode utilizes the operation in the forward conduction mode as its special ESD and/or EMP protection mechanism. The wide-bandgap diode itself is not easy to break down, so it does not more easily break down when it works in the forward conduction mode. Thus, the ESD and EMP protection device of the invention can withstand extremely large ESD current and/or EMP current and possess great potential to replace the existed TVS device made of silicon-based semiconductors, and can be used as a mainstream electric device for ESD and/or EMP protection and associated application circuits in the future.
| Translated title of the contribution | USE OF WIDE-BANDGAP SEMICONDUCTOR IN PREVENTION OF ESD AND EMP AS WELL AS ESD AND EMP PREVENTING DEVICE |
|---|---|
| Original language | Chinese (Traditional) |
| IPC | H02H 9/02(2006.01); H05F 3/02(2006.01) |
| State | Published - 01 02 2021 |
Bibliographical note
公開公告號: 2.02105874E8Announcement ID: 2.02105874E8
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