常關型P型閘極氮化鎵高電子遷移率場效應電晶體之可靠度與動態特性分析研究

Translated title of the contribution: Device Reliability and Dynamic Characteristics Analysis of Normally-off p-GaN gate HEMTs
  • 劉家豪

Research output: Types of Thesis › Doctoral thesis

Translated title of the contributionDevice Reliability and Dynamic Characteristics Analysis of Normally-off p-GaN gate HEMTs
Original languageChinese (Traditional)
Supervisors/Advisors
  • Chiu, Hsien-Chin, Supervisor
StatePublished - 2022
Externally publishedYes

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