後段熱退火對30nm DRAM製程中PMOS負偏壓溫度不穩定之效應探討

Translated title of the contribution: Back end anneal effect on negative bias temperature instability for PMOS in 30nm DRAM technology

徐仁德

Research output: Types of Thesis › Master's thesis

Translated title of the contributionBack end anneal effect on negative bias temperature instability for PMOS in 30nm DRAM technology
Original languageChinese (Traditional)
Supervisors/Advisors
  • Lai, Chao-Sung, Supervisor
StatePublished - 2014
Externally publishedYes

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