Abstract
The invention provides a flash memory including a substrate, a first dielectric layer, a charge-trapping layer, a gate electrode and an electrode unit. Especially, the construction material of the charge-trapping layer of the flash memory has samarium oxide. Since samarium oxide has excellent thermal stability, extremely low leakage current and good charge storage ability, flash memories with low operation voltage, fast write/erase, good durability can be obtained.
| Translated title of the contribution | Flash memory |
|---|---|
| Original language | Chinese (Traditional) |
| IPC | H01L 29/792(2006.01) |
| State | Published - 01 04 2011 |
Bibliographical note
公開公告號: 2.01112422E8Announcement ID: 2.01112422E8