感測場效電晶體裝置

Translated title of the contribution: SENSITIVE FIELD EFFECT TRANSISTOR APPARATUS

Chia-Ming Yang (Inventor), Chao-Sung Lai (Inventor), SZUCHIEH WANG (Inventor), CHENGEN LUE (Inventor)

Research output: Patent

Abstract

The invention discloses a sensitive field effect transistor apparatus, which uses an inorganic film to sense low hydrogen ions. The invention makes use of the film with high deformation stress to adjust the sensitivity of the sensitive film on hydrogen ion by altering the film thickness or changing the substrate type and doped concentration. A differential amplification circuit is used to read signal to form the inorganic ion sensitive field effect transistor/reference field effect transistor apparatus.
Translated title of the contributionSENSITIVE FIELD EFFECT TRANSISTOR APPARATUS
Original languageChinese (Traditional)
IPCG01N 27/414(2006.01)
StatePublished - 01 12 2010

Bibliographical note

公開公告號: 2.01042254E8
Announcement ID: 2.01042254E8

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