Abstract
The invention discloses a sensitive field effect transistor apparatus, which uses an inorganic film to sense low hydrogen ions. The invention makes use of the film with high deformation stress to adjust the sensitivity of the sensitive film on hydrogen ion by altering the film thickness or changing the substrate type and doped concentration. A differential amplification circuit is used to read signal to form the inorganic ion sensitive field effect transistor/reference field effect transistor apparatus.
| Translated title of the contribution | SENSITIVE FIELD EFFECT TRANSISTOR APPARATUS |
|---|---|
| Original language | Chinese (Traditional) |
| Patent number | I414787 |
| IPC | G01N 27/414(2006.01) |
| State | Published - 11 11 2013 |
Bibliographical note
公開公告號: I414787Announcement ID: I414787