Abstract
The invention provides anti static electricity for component of flip chip silicon semiconductor. It produces the silicon controlled rectifier on the substrate directly. The silicon semiconductor chip is installed on the silicon controlled rectifier structure by using flip chip manner. It can release the static electricity current by passing through the silicon controlled rectifier structure. It can achieve the effect of protecting static electricity by increasing the anti static electricity discharging characteristic of silicon semiconductor component.
| Translated title of the contribution | Anti static electricity for component of flip chip silicon semiconductor |
|---|---|
| Original language | Chinese (Traditional) |
| IPC | H01L-023/60(2006.01) |
| State | Published - 01 07 2007 |
Bibliographical note
公開公告號: 2.00725868E8Announcement ID: 2.00725868E8