| Translated title of the contribution | The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes |
|---|---|
| Original language | Chinese (Traditional) |
| Supervisors/Advisors |
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| State | Published - 2011 |
| Externally published | Yes |
接面溫度於氮化銦鎵/氮化鎵多重量子井發光二極體光電特性之研究
王仁炫
Research output: Types of Thesis › Master's thesis