摻雜ⅢA族元素之氧化鎂鋅濺鍍靶材之製備方法

Translated title of the contribution: Preparation method for magnesium zinc oxide sputtering target blended with group IIIA element

Hsin-Chun Lu (Inventor), JIA-QUAN ZHOU (Inventor), YU-XIN LUO (Inventor), ZHEN-SONG ZHANG (Inventor)

Research output: Patent

Abstract

The present invention discloses a preparation method for a magnesium zinc oxide sputtering target blended with a group IIIA element, including: providing a magnesium zinc oxide mixture containing magnesium zinc oxide and a group IIIA element; sequentially carrying out grinding, drying, granulation, sieving, and embryonization treatments to obtain magnesium zinc oxide synthesized green; and finally placing the magnesium zinc oxide synthesized green into a high-temperature furnace and introducing therein noble gas to carry out high-temperature sintering for obtaining a magnesium zinc oxide sputtering target blended with a group IIIA element. The sputtering target prepared by this invention has high compactness and low resistivity, can be used as a target for magnetron sputtering and can be used to form a top electrode and window layer materials on a CuInGaSe2 (CIGS) solar cell, thereby having high infrared penetrability to promote the overall sunlight penetrability.
Translated title of the contributionPreparation method for magnesium zinc oxide sputtering target blended with group IIIA element
Original languageChinese (Traditional)
IPCC23C 14/34(2006.01)
StatePublished - 16 09 2013

Bibliographical note

公開公告號: 2.01337014E8
Announcement ID: 2.01337014E8

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