Abstract
The present invention discloses a preparation method for a magnesium zinc oxide sputtering target blended with a group IIIA element, including: providing a magnesium zinc oxide mixture containing magnesium zinc oxide and a group IIIA element; sequentially carrying out grinding, drying, granulation, sieving, and embryonization treatments to obtain magnesium zinc oxide synthesized green; and finally placing the magnesium zinc oxide synthesized green into a high-temperature furnace and introducing therein noble gas to carry out high-temperature sintering for obtaining a magnesium zinc oxide sputtering target blended with a group IIIA element. The sputtering target prepared by this invention has high compactness and low resistivity, can be used as a target for magnetron sputtering and can be used to form a top electrode and window layer materials on a CuInGaSe2 (CIGS) solar cell, thereby having high infrared penetrability to promote the overall sunlight penetrability.
| Translated title of the contribution | Preparation method for magnesium zinc oxide sputtering target blended with group IIIA element |
|---|---|
| Original language | Chinese (Traditional) |
| IPC | C23C 14/34(2006.01) |
| State | Published - 16 09 2013 |
Bibliographical note
公開公告號: 2.01337014E8Announcement ID: 2.01337014E8
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