改善p型閘極常關式氮化鎵場效應電晶體動態電阻之製程技術開發

Translated title of the contribution: Improved Dynamic Behavior of p-GaN gate Normally-off GaN HEMT by novel Process technique
  • 劉家豪

Research output: Types of Thesis › Master's thesis

Translated title of the contributionImproved Dynamic Behavior of p-GaN gate Normally-off GaN HEMT by novel Process technique
Original languageChinese (Traditional)
Supervisors/Advisors
  • Chiu, Hsien-Chin, Supervisor
StatePublished - 2019
Externally publishedYes

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