Abstract
A thin-film ZnO varistor is formed by sputtering a ZnO thin film directly on a substrate and then by post-annealing the ZnO thin film so as to increase the resistance of thin-film ZnO varistor. The thin-film ZnO varistor thus formed has excellent varistor characteristics, and the manufacturing method is easy to control, and has a high reliability. In addition, the manufacturing method can be fully integrated with the manufacturing process of other semiconductor components to achieve the complete surge protection.
| Translated title of the contribution | Thin-film ZnO varistor and manufacturing method and application thereof |
|---|---|
| Original language | Chinese (Traditional) |
| IPC | H01L-021/3205(2006.01);H01L-021/321(2006.01);H01L-021/203(2006.01) |
| State | Published - 16 12 2008 |
Bibliographical note
公開公告號: 2.00849395E8Announcement ID: 2.00849395E8