Abstract
The present invention discloses a gas sensing device, comprising a silicon substrate, an insulating layer, a plasma layer, a metal electrode and a sensing layer. The insulating layer is disposed on the silicon substrate. The plasma layer is disposed on the insulating layer. The metal electrode is disposed on the portion of the plasma layer. The sensing layer is disposed on the metal electrode and the portion of the plasma layer.
| Translated title of the contribution | GAS SENSING DEVICE AND MANUFACTURING METHOD THEREOF |
|---|---|
| Original language | Chinese (Traditional) |
| Patent number | I695168 |
| IPC | G01N-027/407(2006.01);G01N-027/66(2006.01);G01N-027/62(2006.01);G01N-027/12(2006.01) |
| State | Published - 01 06 2020 |
Bibliographical note
公開公告號: I695168Announcement ID: I695168