氮化鋁鎵/氮化鎵高電子遷移率電晶體結構上銦電極與鎳/金電極蕭特基接面差異

Translated title of the contribution: Differences between Schottky Interfaces of In Gate and Ni/Au Gate on AlGaN/GaN HEMT Structure
  • 黃正傑

Research output: Types of Thesis › Master's thesis

Translated title of the contributionDifferences between Schottky Interfaces of In Gate and Ni/Au Gate on AlGaN/GaN HEMT Structure
Original languageChinese (Traditional)
Supervisors/Advisors
  • Chen, Nai-Chuan, Supervisor
StatePublished - 2015
Externally publishedYes

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