氮化鎵系發光二極體結構及其製作方法

The present invention discloses a structure of gallium nitride series LED and the manufacturing method thereof. It comprises: (a) a substrate; (b) at least a gallium nitride series layer located on the substrate; (c) a structure of interface isolation formed by an n-type gallium nitride series superlattice and an n-type gallium nitride series layer, and a gallium nitride series light-emitting layer formed sequentially on the gallium nitride series layer; and (d) a p-type gallium nitride series layer formed over the gallium nitride series light-emitting layer. In the present invention, epitaxial growth of the interface isolation structure and light-emitting layer is proceeded under the condition of pure nitrogen gas and low temperature by decreasing the temperature and regulating the environment of epitaxy reaction chamber to improve the efficiency of radiative recombination.