氮化鎵製程氧化低密度脂蛋白感測元件

Translated title of the contribution: Oxidized low density lipoprotein sensory device employing gallium nitride process

Hsien-Chin Chiu (Inventor), Shu-Er Chow (Inventor), Ray-Ming Lin (Inventor), Chao-Sung Lai (Inventor), XIN-SHUN HUANG (Inventor), ZHAO-WEI LIN (Inventor), BING-SHAN HONG (Inventor), YUNGHSIANG LIN (Inventor)

Research output: Patent

Abstract

An oxidized low density lipoprotein sensory device employing gallium nitride process, which is a gallium nitride field-effect transistor with high electron mobility, comprises a gateless aluminum gallium nitride/gallium nitride (AlGaN/GaN) sensory transistor, a testing window, a source, a drain, two metal connecting lines and a passivation layer. The gateless AlGaN/GaN sensory transistor comprises an epitaxy wafer which comprises a GaN layer and an AlGaN layer. The testing window is disposed on the epitaxy wafer. The two metal connecting lines are disposed on the source and the drain respectively. The passivation layer is covered on the surface of the device except for the testing window. A built-in piezoelectric electric field is produced by the property of the field-effect transistor and the polarization effect of AlGaN/GaN, thereby the protein oxidation levels are detected quickly, accurately and simply in human bodies.
Translated title of the contributionOxidized low density lipoprotein sensory device employing gallium nitride process
Original languageChinese (Traditional)
Patent numberI364539
IPCG01N-033/68(2006.01);G01N-033/92(2006.01)
StatePublished - 21 05 2012

Bibliographical note

公開公告號: I364539
Announcement ID: I364539

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