Abstract
An oxidized low density lipoprotein sensory device employing gallium nitride process, which is a gallium nitride field-effect transistor with high electron mobility, comprises a gateless aluminum gallium nitride/gallium nitride (AlGaN/GaN) sensory transistor, a testing window, a source, a drain, two metal connecting lines and a passivation layer. The gateless AlGaN/GaN sensory transistor comprises an epitaxy wafer which comprises a GaN layer and an AlGaN layer. The testing window is disposed on the epitaxy wafer. The two metal connecting lines are disposed on the source and the drain respectively. The passivation layer is covered on the surface of the device except for the testing window. A built-in piezoelectric electric field is produced by the property of the field-effect transistor and the polarization effect of AlGaN/GaN, thereby the protein oxidation levels are detected quickly, accurately and simply in human bodies.
Translated title of the contribution | Oxidized low density lipoprotein sensory device employing gallium nitride process |
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Original language | Chinese (Traditional) |
Patent number | I364539 |
IPC | G01N-033/68(2006.01);G01N-033/92(2006.01) |
State | Published - 21 05 2012 |
Bibliographical note
公開公告號: I364539Announcement ID: I364539