氮化鎵高速電子遷移率場效電晶體彎曲應力探討與兩顆功率放大器之研製

Translated title of the contribution: Bending Effect on GaN High Electron Mobility Transistor and Implementation of Two Power Amplifiers

莊雙豪

Research output: Types of Thesis › Master's thesis

Translated title of the contributionBending Effect on GaN High Electron Mobility Transistor and Implementation of Two Power Amplifiers
Original languageChinese (Traditional)
Supervisors/Advisors
  • Kao, Hsuan-Ling, Supervisor
StatePublished - 2017
Externally publishedYes

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