氮化鎵高電子遷移率電晶體之模型建立與K-band微波開關之實現

Translated title of the contribution: Development of GaN HEMT Model and Implementation of K-Band Traveling-Wave Switch

賴映儒

Research output: Types of ThesisMaster's thesis

Translated title of the contributionDevelopment of GaN HEMT Model and Implementation of K-Band Traveling-Wave Switch
Original languageChinese (Traditional)
Supervisors/Advisors
  • Kao, Hsuan-Ling, Supervisor
StatePublished - 2021
Externally publishedYes

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