Abstract
The present invention relates to a light-emitting diode (LED) structure and the manufacture method, which mainly utilizes wet oxidation technology to oxidize the distributed Bragg reflectors (DBR) in the LED structure, so as to limit the current conduction in LED, and further limit the current in a certain range, so as to concentrate the light-emitting region of LED. Also, by designing the electrode position on the front surface and the shape, the light exited from the die is not blocked by the electrode on the front surface, so as to further raise the brightness of LED, and the projected light has even better light-condensing effect.
| Translated title of the contribution | Light-emitting diode structure and the manufacture method |
|---|---|
| Original language | Chinese (Traditional) |
| Patent number | 190798 |
| IPC | H01L 33/00(2010.01) |
| State | Published - 21 10 2003 |
Bibliographical note
公開公告號: 558848.0Announcement ID: 558848.0