研究三氧化二鋱(Tb2O3)與三氧化二釔(Y2O3)於非揮發電阻式記憶體之特性

Translated title of the contribution: Structural and Resistance switching characteristics of Y2O3 and Tb2O3 thin films for nonvolatile random access memory applications

陳楷明

Research output: Types of ThesisMaster's thesis

Translated title of the contributionStructural and Resistance switching characteristics of Y2O3 and Tb2O3 thin films for nonvolatile random access memory applications
Original languageChinese (Traditional)
Supervisors/Advisors
  • Pan, Tung-Ming, Supervisor
StatePublished - 2010
Externally publishedYes

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