| Translated title of the contribution | Structural and Resistance switching characteristics of Y2O3 and Tb2O3 thin films for nonvolatile random access memory applications |
|---|---|
| Original language | Chinese (Traditional) |
| Supervisors/Advisors |
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| State | Published - 2010 |
| Externally published | Yes |
研究三氧化二鋱(Tb2O3)與三氧化二釔(Y2O3)於非揮發電阻式記憶體之特性
陳楷明
Research output: Types of Thesis › Master's thesis