砷化銦量子點特性受砷化銦鎵應變緩衝層成份變化影響之研究

Translated title of the contribution: Characterization of InAs Quantum Dots with InxGa1-xAs Strain-Reducing Layer

林永翔

Research output: Types of Thesis › Master's thesis

Translated title of the contributionCharacterization of InAs Quantum Dots with InxGa1-xAs Strain-Reducing Layer
Original languageChinese (Traditional)
Supervisors/Advisors
  • Nee, Tzer-En, Supervisor
StatePublished - 2004
Externally publishedYes

Access to Document

Cite this