Abstract
A semiconductor device with vulcanization treatment reinforcement, manufacturing method and application thereof, which utilizes a sulfur-containing solution to carry out the vulcanization treatment to form a sulfide protection layer on the surface of semiconductor device, such that the surface state of semiconductor device can be stabilized to avoid the current leakage phenomenon generated in the semiconductor device. Thereby, the process yield and device efficacy can be enhanced so that the disclosed invention can be applied to the light-emitting diode and high electron-mobility transistor.
| Translated title of the contribution | Semiconductor device with vulcanization treatment reinforcement, manufacturing method and application thereof |
|---|---|
| Original language | Chinese (Traditional) |
| IPC | H01L 21/31(2006.01); H01L 33/44(2010.01); H01L 29/778(2006.01) |
| State | Published - 01 07 2007 |
Bibliographical note
公開公告號: 2.00725936E8Announcement ID: 2.00725936E8