Abstract
The present invention relates to a method of vulcanization treatment on metamorphic InAlAs/InGaAs high electron mobility transistor (MHEMT), in which the vulcanization treatment application is used in the device of metamorphic InAlAs/InGaAs high electron mobility transistor (MHEMT) to make inactivation treatment of gate, such that the threshold voltage can be increased, surface leaking current can be decreased, and surface state density is also increased to enable the disclosed method to be applied in the range of high current density and high input power.
| Translated title of the contribution | Method of vulcanization treatment on metamorphic InAlAs/InGaAs high electron mobility transistor (MHEMT) |
|---|---|
| Original language | Chinese (Traditional) |
| Patent number | I358772 |
| IPC | H01L 21/335(2006.01) |
| State | Published - 21 02 2012 |
Bibliographical note
公開公告號: I358772Announcement ID: I358772