Abstract
InGaP epilayers were grown on (100) GaAs substrate by liquid phase
epitaxy (LPE) . Fourdifferent growth temperature 800, 750, 710 and 700℃ were
studied. The optimum growth conditions involve a growth temperature of 750℃ and
a lattice mismatch (Aa /as) of 0.290, thegrown layers show a mirror-like surface
morphology, the strongest photoluminescence (PL)intensity, the narrowest-PL full
width at half maximun.(FWHM), ~6 meV at 17 K., andminimum defect related PL
subpeak.
| Original language | Chinese (Traditional) |
|---|---|
| Pages (from-to) | 95-106 |
| Journal | 材料科學 |
| Volume | 20 |
| Issue number | 2 |
| State | Published - 1988 |