製備條件對於濺鍍非晶性氧化銦鎵鋅薄膜電阻式記憶體元件特性影響之探討

Translated title of the contribution: Effects of fabrication conditions on the characteristics of sputter-deposited amorphous indium gallium zinc oxide thin film resistive random access memory devices

邱偉誌

Research output: Types of ThesisMaster's thesis

Translated title of the contributionEffects of fabrication conditions on the characteristics of sputter-deposited amorphous indium gallium zinc oxide thin film resistive random access memory devices
Original languageChinese (Traditional)
Supervisors/Advisors
  • Lu, Hsin-Chun, Supervisor
StatePublished - 2022
Externally publishedYes

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