Abstract
A method of stacking flip-chip solar cell is provided, which makes use of flip-chip technique to grow a P-N junction semiconductor layer capable of absorbing light with long wave-length (such as infrared rays) for absorbing light with middle wave-length (such as visible light) and a P-N junction semiconductor layer capable of absorbing light with short wave-length (such as ultraviolet rays ). Accordingly, the invention uses flip-chip technique to stack solar cells, so as to solve the problem of lattice dis-match of each layer thereby enhancing efficiency of solar cell.
Translated title of the contribution | Method of stacking flip-chip solar cell |
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Original language | Chinese (Traditional) |
IPC | H01L-031/0248(2006.01) |
State | Published - 01 05 2007 |
Bibliographical note
公開公告號: 2.00717836E8Announcement ID: 2.00717836E8