Abstract
A method of stacking flip-chip solar cell is provided, which makes use of flip-chip technique to grow a P-N junction semiconductor layer capable of absorbing light with long wave-length (such as infrared rays) for absorbing light with middle wave-length (such as visible light) and a P-N junction semiconductor layer capable of absorbing light with short wave-length (such as ultraviolet rays ). Accordingly, the invention uses flip-chip technique to stack solar cells, so as to solve the problem of lattice dis-match of each layer thereby enhancing efficiency of solar cell.
| Translated title of the contribution | Method of stacking flip-chip solar cell |
|---|---|
| Original language | Chinese (Traditional) |
| Patent number | I383509 |
| IPC | H01L-031/0248(2006.01) |
| State | Published - 21 01 2013 |
Bibliographical note
公開公告號: I383509Announcement ID: I383509