Abstract
The invention relates to a memory structure, which has a dielectric layer contained between the upper and lower electrodes. Moreover, an iridium oxide film is further contained between the upper electrode and the dielectric layer. Under existence of the iridium oxide film, the quantity of metal particles of the upper electrode can be controlled to diffuse into the dielectric layer in the ionic form, or the quantity of oxygen-vacancies in the memory can also be controlled. As a result, the operating voltage/ current of the memory is reduced, and the consistency and reliability of the resistance conversion of memory are also improved.
| Translated title of the contribution | Memory structure |
|---|---|
| Original language | Chinese (Traditional) |
| Patent number | I607438 |
| IPC | G11C 13/00(2006.01); H01L 21/8239(2006.01) |
| State | Published - 01 12 2017 |
Bibliographical note
公開公告號: I607438Announcement ID: I607438