Abstract
The present invention relates to a structure of a memory device, which is one of resistive memories and comprises an intermediate layer made up of a first dielectric film and a second dielectric film between the top electrode and the bottom electrode, with iridium oxide being used as a material to make the top electrode. In operation, formation of oxygen vacancy filament path can be better provided to demonstrate the characteristics of complementary resistive switching memory array, it can also be further applied in biomedical inspection.
| Translated title of the contribution | Structure of memory device |
|---|---|
| Original language | Chinese (Traditional) |
| IPC | G11C 13/00(2006.01); H01L 21/8239(2006.01) |
| State | Published - 01 11 2017 |
Bibliographical note
公開公告號: 2.01738888E8Announcement ID: 2.01738888E8