超薄二氧化鉿高介電材料成長於應變碳化矽／矽之雙異質結構之界面研究

Translated title of the contribution: Interface properties of ultra-thin HfO₂ gate dielectrics on Tensile strained-SiC/Si heterostructure

Research output: Types of Thesis › Master's thesis

Translated title of the contribution	Interface properties of ultra-thin HfO₂ gate dielectrics on Tensile strained-SiC/Si heterostructure
Original language	Chinese (Traditional)
Supervisors/Advisors	Liu, Kou-Chen, Supervisor
State	Published - 2004
Externally published	Yes

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