透明電極應用於砷化鎵MHEMT晶圓磊晶結構

Disclosed is a transparent electrode apply to GaAs manufacturing process, which comprises an MHEMT epitaxy wafer structure, a transparent gate, a source, and a drain. The MHEMT epitaxy wafer structure is grown on a GaAs substrate by using Molecular Beam Epitaxy (MBE) method. A Schottky layer and a cover layer are grown on the GaAs substrate; the cover layer is grown on the Schottky layer. The transparent gate that is made of ITO is deployed on the Schottky layer, the source and the drain are deployed on the cover layer of the two sides to the transparent gate. This invention therefore is able to increase the light-receiving range effectively, which enables the MHEMT epitaxy wafer structure to be more sensitive to light wave.