透過雙界面表面電漿以改變電子於非金屬材料內部不同能階躍遷速率的方法及結構

Translated title of the contribution: A method and structure to change the different energy level transition rates of electrons inside non-metallic materials through dual-interface surface plasma

Nai-Chuan Chen (Inventor), BO-REN HUANG (Inventor), WEN-ZHENG KE (Inventor), CHONG-JI LIAO (Inventor), JUN-YI LV (Inventor)

Research output: Patent

Abstract

This invention discloses a method and structure to change the different energy level transition rates of electrons inside non-metallic materials through dual-interface surface plasma, which includes: preparing a substrate; forming a first metallic layer on the substrate; forming a non-metallic material layer on the metallic layer and forming a second metallic material layer on the non-metallic layer. The structure has metals on both sides of the non-metallic material layer, and through the coupling of interface surface plasma on the two sides, the characteristics of the surface plasma can be adjusted as needed so that the surface plasma can be used to change the transition rates of electrons due to stimulated absorption, stimulated emission or spontaneous radiation inside the non-metallic material.
Translated title of the contributionA method and structure to change the different energy level transition rates of electrons inside non-metallic materials through dual-interface surface plasma
Original languageChinese (Traditional)
Patent numberI457683
IPCG02F 1/35(2006.01)
StatePublished - 21 10 2014

Bibliographical note

公開公告號: I457683
Announcement ID: I457683

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