Abstract
The present invention provides an ion sensitive field effect transistor, which includes a semiconductor layer, and a sensitive layer and a conductive layer respectively formed on two opposite surfaces of the semiconductor layer. In particular, the sensitive layer is composed of material including at least samarium oxide, which can generate a corresponding voltage due to the pH value of the object under test when contacting the object under test, and further output the voltage to outside through the conductive layer electrically connected to the sensitive layer, thereby accurately measuring the change of pH value of the object under test. The present invention also provides an ion sensitive electrode having the ion sensitive field effect transistor.
Translated title of the contribution | Ion sensitive field effect transistor and ion sensitive electrode having the ion sensitive field effect transistor |
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Original language | Chinese (Traditional) |
Patent number | I386644 |
IPC | G01N-027/414(2006.01) |
State | Published - 21 02 2013 |
Bibliographical note
公開公告號: I386644Announcement ID: I386644