離子感測電極裝置

Translated title of the contribution: Ion detection electrode device

Yen-Heng Lin (Inventor), Min-Hsien Wu (Inventor), Tung-Ming Pan (Inventor), YOU-FANG LI (Inventor), ZHAO-WEN LIN (Inventor)

Research output: Patent

Abstract

An ion detection electrode device includes a semiconductor layer having opposite upper surface and lower surface; a sensing layer disposed on said upper surface and is composed of Thulium Titanium Oxide wherein when the sensing layer is in contact with the test object the potential difference generates an electrical potential; a conductive layer which is conductive and is disposed on the lower surface of said semiconductor layer, while electrically connecting with the sensing layer to output the electrical potential produced by sensing layer to the outside; an enzyme layer disposed on the sensing layer and capable of producing acid-base changes with the test object. Using said enzyme layer the application of said sensing device can be extended to enzyme detection. Using Thulium Titanium Oxide as the sensing material can reduce hysteresis effect and produce high acid-base sensitivity. Properties such as simple structure, low production cost and easy operation offer suitability for developing a one-time sensing device.
Translated title of the contributionIon detection electrode device
Original languageChinese (Traditional)
Patent numberI420104
IPCG01N-033/50(2006.01)
StatePublished - 21 12 2013

Bibliographical note

公開公告號: I420104
Announcement ID: I420104

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